93LC66B The 93AA66 is a 4K-bit Low-voltage Serial Electrically Erasable Prom Memory With an Org Pin Selectable Memory Configuration of X 8-bits or. bit organization (93LC66B) x16bits (93LC66B). .. Please specify which device, revision of silicon and Data Sheet (include Literature #) you are. 93LC66B datasheet, 93LC66B circuit, 93LC66B data sheet: MICROCHIP – 4K Microwire Compatible Serial EEPROM,alldatasheet, datasheet, Datasheet.
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Advanced CMOS technology makes these devices ideal for low power nonvolatile memory applications. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specication is not implied.
93LC66B PDF Datasheet浏览和下载
Exposure to maximum rating conditions for extended periods may affect device reliability. This application is not tested but guaranteed by characterization.
These clock cycles are required to clock in all required opcode, address, and data bits before an instruction is executed Table and Table A high level selects the device; a low level deselects the device and forces it into standby mode.
However, a programming cycle which is already in dxtasheet will be completed, regardless of the Chip Select CS input signal. If CS is brought low during a program cycle, the device will go into standby mode as soon as the programming cycle is completed.
93LC66A Datasheet,4K Microwire Compatible Serial EEPROM-
Opcode, address, and data bits are clocked in on the positive edge of CLK. Data bits are also clocked out on the positive edge of CLK. This gives the controlling master freedom in preparing opcode, address, and data. If CS is high, but a START condition has not been detected, any number of clock cycles can be received by the device without changing its status i.
Datassheet such a condition the voltage level seen at Data Out is undened and will depend upon the relative impedances of Data Out 93cl66b the signal source driving A0. The higher the current sourcing capability of A0, the higher the voltage at the Data Out pin. As soon as CS is high, the device is no longer in the standby mode. An instruction following a START condition will only be executed if dafasheet required amount of opcodes, addresses, and data bits for any particular instruction is clocked in.
After execution of an instruction i. During power-up, all programming modes of operation are inhibited until VCC has reached a level greater than 2. During power-down, the source data protection datassheet acts to inhibit all programming modes when Vcc has fallen below 2. After power-up, the device is automatically in the EWDS mode. CS is brought low following the loading of the last address bit.
This falling edge of the CS pin initiates the self-timed programming cycle.
Sequential read is possible when CS is held high. The memory data will automatically cycle to the next register and output sequentially. After the last data bit is put on the DI pin, the falling edge of CS initiates the self-timed autoerase and programming cycle.
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