AD Datasheet PDF Download – Transistor, AD data sheet. Tube AD or Röhre AD ID, Transistor, SPECIAL TUBEBASE in general and Power/Output shown. Radio tubes are valves. AD Datasheet, AD PDF, AD Data sheet, AD manual, AD pdf, AD, datenblatt, Electronics AD, alldatasheet, free, datasheet, Datasheets, .
|Published (Last):||5 April 2009|
|PDF File Size:||4.16 Mb|
|ePub File Size:||2.19 Mb|
|Price:||Free* [*Free Regsitration Required]|
Search the history of over billion web pages on the Internet. The three sets of books, easily identifiable by the colours on their covers, are as follows: Book 1 blue Semiconductor devices and integrated circuits Book 2 orange Valves and tubes Book 3 green Passive components, materials, and assemblies. Each part is completely reviewed annually; revised and reprinted where necessary.
Revisions to previous data are indicated by an arrow in the margin. Datasgeet data contained in these books are as accurate and up to date as it is reasonably possible to make them at the time of going to press. It must however be understood that no guarantee can be given here regarding the availability of the various devices or that their specifications may not be changed before the next edition is published.
The devices on which full data are given in these books are those around which we would recommend equipment to be designed.
Where appropriate, other types no longer recommended for new equipment designs, but generally available for equipment production are listed separately with abridged data. Data sheets for these types may be obtained on request. Older devices on which data may still be obtained on request are also included in the index of the appropriate part of each book.
Eatasheet Silicon planar types cont. V min P t Jt max Case No. V min PiotTiax Case No. Amplifier Modules Type No. Type Nomenclature This section explains the system of type nomenclature used for Mullard Semi- conductor devices showing the significance of each type letter or number. List of Symbols for Light Current Semiconductor Devices This section gives the main symbols dagasheet in quoting ratings and characteristics of Semiconductor Devices.
Explanation of Handbook Data 1. Tentative Data, Final Data. Voltage ratings charts and permissible area of operation.
Definitions of the main current ratings, l cl El Ad12under various datxsheet ditions. Definition of P tot maximum — distinction between steady state and pulse — dependence on temperature — de-rating chart — heatsinks and thermal resistance considerations.
Definition of TjT mbT case. Mounting and Soldering Recommendations 1. Mounting of ‘Lockfit’ Transistors. The type nomenclature of a discrete device or, in certain cases, of a range of devices, ad1662 of two letters followed by a serial number. The serial datashert may consist of three figures or of one letter and two figures depending on the main application of the device.
The first letter indicates the semiconductor material used: A — germanium B — silicon C — compound materials such as gallium arsenide D — compound materials such as indium antimonide R — compound materials such as cadmium sulphide The second letter indicates the general function of the device: A — detection diode, high speed diode, mixer diode. B — variable capacitance diode C — transistor for a.
The serial number consists of three figures. The serial number consists of one letter Z, Y, X, W, etc. These additions are as follows: Rectifier Diodes and Thyristors The group of figures indicates the rated repetitive peak reverse voltage, Vrrm, or the rated repetitive peak off-state voltage, Dstasheet, whichever value is lower, in volts for each type. The final letter R is used to denote a reverse polarity version stud anode where applicable. The normal polarity version stud cathode has no special final letter.
Voltage Regulator Diodes, Transient Suppression Diodes The first letter adtasheet the nominal percentage tolerance in the operating voltage Vz.
(PDF) AD162 Datasheet download
The group of figures indicates the typical operating voltage Vz for each type at the nominal operating current l z rating of the range. For transient suppressor diodes the figure indicates the maximum recommended standoff voltage V R. The letter V is used to denote a decimal sign. BTWR Silicon thyristor for ‘industrial’ applications. In BTW24 range with V maximum repetitive peak voltage, reverse polarity, stud connected to anode.
RPY7I Photoconductive cell for ‘industrial’ applications. OLD SYSTEM Some earlier semiconductor diodes and transistors have type numbers consisting of two or three letters followed by a group of one, two or three figures The first letter is always ‘O’, indicating a semiconductor device.
The second and third letter s indicate the general class of device: A — diode or rectifier C — transistor AP — photodiode CP — phototransistor A’Z — voltage regulator diode The group of figures is a serial number indicating a particular design or develop- ment. Instantaneous value of varying component of emitter current.
Instantaneous value of total emitter current. Peak value of the varying component of the emitter current. Peak value of the total emitter current.
Zenerimpedance The letter O is used with three terminal devices as a third subscript only to denote that the terminal not indicated in the subscript is open-circuited. The letter S is also used with three terminal devices as a third subscript to denote that the terminal not indicated in the subscript is shorted to the reference terminal.
Sequence of subscripts The first subscript denotes the terminal at which the current or terminal voltage is measured.
The second subscript denotes the reference terminal or circuit mode that the current or terminal voltage is measured. Where the reference terminal or circuit is understood the second subscript may be omitted where its use is not required to preserve the meaning of the symbol.
The supply voltage shall be indicated by repeating the terminal subscript. The reference terminal may then be designated by the third subscript.
Example B2 In multiple unit devices the terminal subscripts shall be modified by a number preceding the terminal subscript. Example 2B Milliard G. The first subscript in the matrix notation shall identify the element of the four pole matrix. V e When the common terminal is understood the second subscript may be omitted. Static value of parameters shall be indicated by the upper case capital subscripts. Example hi Ehi B The four pole matrix parameters of the device are represented by lower case symbols with the appropriate subscripts h ib The four pole matrix parameters of external circuits and of circuits in which the device forms only a small part are represented by upper case symbols with the appropriate subscripts.
Af B N Milliard G. The figure below shows a two-port network with the incident and reflected travelling wave quantities a, b, a 2 and b 2which are square roots of power. Tentative Data Tentative data aims at providing information on new devices as early as possible to allow the customer to proceed with circuit design.
The tentative data may not include all the characteristics or ratings which will be incorporated later in the final data and some of the numerical values quoted may be slightly adjusted later on. Final Data The transfer from tentative data to final data involves the addition of those numerical values and curves which were not available at tentative data stage and small adjustments to those values already quoted in tentative data.
Reissue of final data may be made from time to time to incorporate additional information resulting from prolonged dtasheet experience or to meet new applications. Reference to standard outline nomenclature if applicable and lead connections. Voltage, current, power and thermal ratings. RATINGS A rating is a limiting condition of usage specified for a device by the manufacturer, beyond which the serviceability may be impaired.
Search Results Page
A rating system is a set of principles upon which ratings are established and which determines their interpretation. There are dafasheet systems which have been internationally accepted and which allocate responsibility between the device manufacturer and the circuit designer differently. The definitions of the datashewt systems accepted by the International Electro- technical Commission are as follows: These values are chosen by the device manufacturer to provide acceptable serviceability of jhe device, taking no responsibility for variations in equip- ment or environment, and the effects of changes in operating conditions due to variations in the characteristics of the device under consideration and of all other devices in the equipment.
The equipment manufacturer should design so that initially and throughout life no absolute maximum value for the intended service is exceeded with any device under the worst probable operating conditions with respect to variations in supply voltage, environment, equipment components, equipment control adjustment, load, signal or characteristics of the device under consideration and of all other devices in the equipment.
These values are chosen by the device manufacturer to provide acceptable serviceability cf the device in average applications, taking responsibility for normal changes in operating conditions due to variations in supply voltage, environment, equipment components, equipment control adjust- ment, load, signal or characteristics of all other devices in the equipment.
The equipment manufacturer should design so that initially no design- centre value for the intended service is exceeded with a bogey device in equipment operating at the stated normal supply voltage. These values are chosen by the device manufacturer to provide acceptable serviceability of the device, taking responsibility for the effects of changes in operating conditions due to variations in the characteristics of the device under consideration.
The equipment manufacturer should design so that initially and throughout life no design-maximum value for the intended service darasheet exceeded with a bogey device under the datsaheet probable operating cdnditions with respect to variations in supply voltage, environment, equipment components, equipment control adjustment, load, signal or characteristics of the device under consideration av162 of all other devices in the equipment.
The list of these ratings and their definitions is given as follows: The collector voltage is negative with respect to base in PNP transistors and positive w. Emitter to base voltage ratings V E b max The maximum permissible instantaneous reverse voltage between emitter and base terminal.
The emitter voltage is negative datasueet. Collector to emitter voltage ratings Vce max The maximum permissible instantaneous voltage between collector and emitter terminals. The collector voltage is negative w. This rating is very dependent on circuit conditions and collector current and it is necessary to refer to the curve of Vce versus lc for the appropriate circuit condition in order to obtain the correct rating Vce max Datashet The maximum permissible instantaneous voltage between collector and emitter terminals when the emitter current is reduced to zero by means of a reverse emitter base voltage, i.
Special care must be taken to ensure that thermal runaway due to excessive collector leakage current does not occur in this condition. Due to the current dependency of V C e it is usual to present this information as a voltage rating chart which is a curve of collector current versus collector to emitter voltage see Fig. This curve is divided into two areas: A permissible area of operation under all conditions of base drive provided the dissipation rating is not exceeded area 1 and an area where operation is allowable under certain specified conditions area 2.
To assist in datashheet the rating in this second area, further curves are provided relating the voltage rating to external circuit conditions, for example: In the case of an inductive load and when an energy rating is given, it may be permissible to operate outside the rated area provided the specified energy rating is not exceeded.
Without further qualification, the dc value is implied. Ic av max The maximum permissible average value of the total collector current. Icm The maximum permissible instantaneous value of the total collector current.
Emitter current ratings l E max The maximum permissible emitter current.